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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6623656 B1

PDFFull Text
Date of Patent:
Sep. 23, 2003

Filed:

Feb. 26, 2001

Source reagent composition for cvd formation of zr/hf doped gate dielectric and high dielectric constant metal oxide thin films and method of using same

Applicant:
Inventors:

Thomas H. Baum, New Fairfield, CT (US);

Chongying Xu, New Milford, CT (US);

Witold Paw, New Fairfield, CT (US);

Bryan C. Hendrix, Danbury, CT (US);

Jeffrey F. Roeder, Brookfield, CT (US);

Ziyun Wang, New Milford, CT (US);

Assignee:

Advanced Technology Materials, Inc., Danbury, CT (US);

Attorney:

Margaret Chappuis

Primary Examiner:

Mark Kopec

Assistant Examiner:

Kallambella Vijayakumar

Int. Cl.
CPC ...
C23C 1/640 ; C23C 1/618 ; C23C 1/646 ; C09K 3/00 ; C08J 3/02 ; B32B 9/00 ;
U.S. Cl.
CPC ...
C23C 1/640 ; C23C 1/618 ; C23C 1/646 ; C09K 3/00 ; C08J 3/02 ; B32B 9/00 ;
Abstract

Chemical vapor deposition (CVD) precursor compositions for forming Zr/Hf doped gate dielectric, ferroelectric, or high dielectric constant (k) metal oxide thin films. The precursor composition in one embodiment comprises a metal precursor having a general formula M(&bgr;-diketonate) (OR) , wherein M is Zr or Hf, and R is t-butyl. The precursor composition may also comprise a solvent medium selected from the group consisting of ethers, glymes, tetraglymes, amines, polyamines, alcohols, glycols, aliphatic hydrocarbon solvents, aromatic hydrocarbon solvents, cyclic ethers, and compatible combinations of two or more of the foregoing.

Find Patent Forward Citations

Baum, Thomas. (2003). Source reagent composition for cvd formation of zr/hf doped gate dielectric and high dielectric constant metal oxide thin films and method of using same (U.S. Patent No. 6623656). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6623656

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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