The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 16, 2003

Filed:

Dec. 21, 2001
Applicant:
Inventors:

Koichiro Tanaka, Kanagawa, JP;

Setsuo Nakajima, Kanagawa, JP;

Takehito Yagi, Kanagawa, JP;

Mikito Ishii, Kanagawa, JP;

Kenichiro Nishida, Saitama, JP;

Norihito Kawaguchi, Tokyo, JP;

Miyuki Masaki, Tokyo, JP;

Atsushi Yoshinouchi, Chiba, JP;

Assignee:

Other;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 2/710 ;
U.S. Cl.
CPC ...
G02B 2/710 ;
Abstract

A laser irradiation apparatus having a low running cost compared to the conventional, and a laser irradiation method using the laser irradiation apparatus, are provided. Crystal grains having a size in the same order as, or greater than, conventional grains are formed. The cooling speed of a semiconductor film is made slower, and it becomes possible to form crystal grains having a grain size in the same order as, or greater than, the size of grains formed in the case of irradiating laser light having a long output time to the semiconductor film. This is achieved by delaying one laser light with respect to another laser light, combining the laser lights, and performing irradiation to the semiconductor film in the case of irradiating laser light using a solid state laser as a light source, which has a short output time.


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