The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2003
Filed:
Sep. 08, 2000
Tokyo Electron Limited, Tokyo-To, JP;
Abstract
An inorganic insulating film of SiC is formed on a fluorine-containing carbon film by a chemical vapor deposition process using SiF and C H as source gases. By using SiF and CF containing no hydrogen (H) as source gases, H inhibited from being incorporated into the inorganic insulating film forming a hard mask . Thus, H having diffused outwardly from the inorganic insulating film is bonded to fluorine (F) in the fluorine-containing carbon film to form HF which inhibits the corrosion of the inorganic insulating film and so forth. Thus, it is possible to inhibit the deterioration of the adhesion of the hard mask formed of the inorganic insulating film to other layers, such as the fluorine-containing carbon film