The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2003
Filed:
Apr. 25, 2000
Advanced Micro Devices, Inc., Austin, TX (US);
Abstract
The present invention is directed to a method of forming metal silicide regions on a gate electrode ( ) and on the source/drain regions ( ) of a semiconductor device ( ). In one illustrative embodiment, the method comprises forming a gate stack ( ) above a semiconducting substrate ( ), the gate stack ( ) being comprised of a gate electrode ( ) and a protective layer ( ), forming a plurality of source/drain regions ( ) in the substrate ( ), and forming a first metal silicide region ( ) above each of the source/drain regions ( ). The method further comprises removing the protective layer ( ) from above the gate electrode ( ) and forming a second metal silicide region ( ) above the gate electrode ( ).