The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2003
Filed:
Oct. 11, 2001
Applicant:
Inventors:
Ping Jiang, Plano, TX (US);
Guoqiang Xing, Plano, TX (US);
Andrew J. McKerrow, Dallas, TX (US);
Robert Kraft, Plano, TX (US);
Hyesook Hong, Richardson, TX (US);
Assignee:
Texax Instruments Incorporated, Dallas, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1302 ;
U.S. Cl.
CPC ...
H01L 2/1302 ;
Abstract
Plasma treating a low-k dielectric layer ( ) using an oxidation reaction (e.g., O ) to improve patterning. Resist poisoning occurs due to an interaction between low-k films ( ), such as OSG, and DUV resist ( ). The plasma treatment is performed to either pretreat a low-k dielectric ( ) before forming the pattern ( ), during a rework of the pattern ( ), or between via and trench patterning to reduce resist poisoning.