The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 16, 2003

Filed:

Oct. 11, 2001
Applicant:
Inventors:

Ping Jiang, Plano, TX (US);

Guoqiang Xing, Plano, TX (US);

Andrew J. McKerrow, Dallas, TX (US);

Robert Kraft, Plano, TX (US);

Hyesook Hong, Richardson, TX (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1302 ;
U.S. Cl.
CPC ...
H01L 2/1302 ;
Abstract

Plasma treating a low-k dielectric layer ( ) using an oxidation reaction (e.g., O ) to improve patterning. Resist poisoning occurs due to an interaction between low-k films ( ), such as OSG, and DUV resist ( ). The plasma treatment is performed to either pretreat a low-k dielectric ( ) before forming the pattern ( ), during a rework of the pattern ( ), or between via and trench patterning to reduce resist poisoning.


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Jiang, Ping. (2003). Plasma treatment of low-k dielectric films to improve patterning (U.S. Patent No. 6620560). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6620560

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