The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 16, 2003
Filed:
Oct. 01, 2000
Applicant:
Inventors:
Yasuhiro Goshoo, Tokyo, JP;
Hirofumi Toujou, Tokyo, JP;
Masayuki Yoneda, Tokyo, JP;
Takeshi Fukiura, Tokyo, JP;
Assignee:
Yamatake Corporation, , JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01L 9/04 ; H01L 2/984 ;
U.S. Cl.
CPC ...
G01L 9/04 ; H01L 2/984 ;
Abstract
That portion of an n-type single-crystal Si layer which corresponds to a pressure-sensitive region is etched to an SiO layer by using the SiO layer as an etching stopper layer. The SiO layer exposed by this etching is removed. The pressure-sensitive region of the n-type single-crystal Si layer is etched by a predetermined amount to form a diaphragm . Thus, the SiO layer is removed from the diaphragm and a diaphragm edge portion