The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2003
Filed:
Dec. 27, 2000
Yasunori Inoue, Ohgaki, JP;
Naoteru Matsubara, Gifu, JP;
Hidetaka Nishimura, Gifu, JP;
Hideki Mizuhara, Bisai, JP;
Sanyo Electric Co., Ltd., Osaka, JP;
Abstract
A method of fabricating a semiconductor device capable of attaining an excellent embedding characteristic also when an opening has a small diameter is obtained. According to this method of fabricating a semiconductor device, an interlayer dielectric film having an opening is formed. A first conductive member is formed in the opening by sputtering. In advance of formation of the first conductive member, first heat treatment is performed at a temperature capable of reducing the quantity of moisture and hydroxyl groups in the interlayer dielectric film. Thus, the interlayer dielectric film has a small quantity of moisture and hydroxyl groups when the first conductive member is embedded in the opening, whereby the embedding characteristic of the first conductive member is improved. Consequently, electric characteristics of a contact part can be improved also when the opening has a small diameter.