The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2003
Filed:
Sep. 18, 2002
Babak Sadigh, Oakland, CA (US);
Thomas J. Lenosky, Pleasanton, CA (US);
Tomas Diaz de la Rubia, Danville, CA (US);
Martin Giles, Hillsborough, OR (US);
Maria-Jose Caturla, Livermore, CA (US);
Vidvuds Ozolins, Pleasanton, CA (US);
Mark Asta, Evanston, IL (US);
Silva Theiss, St. Paul, MN (US);
Majeed Foad, Santa Clara, CA (US);
Andrew Quong, Livermore, CA (US);
The Regents of the University of California, Oakland, CA (US);
Abstract
A method for enhancing the equilibrium solubility of boron and indium in silicon. The method involves first-principles quantum mechanical calculations to determine the temperature dependence of the equilibrium solubility of two important p-type dopants in silicon, namely boron and indium, under various strain conditions. The equilibrium thermodynamic solubility of size-mismatched impurities, such as boron and indium in silicon, can be raised significantly if the silicon substrate is strained appropriately. For example, for boron, a 1% compressive strain raises the equilibrium solubility by 100% at 1100° C.; and for indium, a 1% tensile strain at 1100° C., corresponds to an enhancement of the solubility by 200%.