The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2003
Filed:
Jun. 29, 2001
Applicant:
Inventors:
Heung Jae Cho, Kyoungki-do, KR;
Dea Gyu Park, Kyoungki-do, KR;
Assignee:
Hynix Semiconductor Inc., Kyoungki-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ; H01L 2/1337 ; H01L 2/13205 ; H01L 2/976 ; H01L 2/994 ;
U.S. Cl.
CPC ...
H01L 2/1336 ; H01L 2/1337 ; H01L 2/13205 ; H01L 2/976 ; H01L 2/994 ;
Abstract
A semiconductor device and a method for fabricating the semiconductor device using a damascene process are disclosed. The method includes forming an Al O film over a dummy gate disposed over a semiconductor substrate. Next, the dummy gate and a portion of the Al O film are removed to form a groove defined by remains of the Al O film and the semiconductor substrate. Then, a subsequent film is deposited within the groove, and a gate material is formed over the second film to complete the semiconductor device.