The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2003
Filed:
Aug. 13, 2001
Applicant:
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ; H01L 2/18234 ;
U.S. Cl.
CPC ...
H01L 2/1336 ; H01L 2/18234 ;
Abstract
A method of forming a protective film to prevent a nitride read only memory is disclosed. In the method of the present invention, the protective layers are formed in the inter-level dielectrics (ILD)/inter-metal dielectrics (IMD) layer of the nitride read only memory cell, and the protective layers can prevent the nitride read only memory cell from being penetrated by the ultra-violet light or plasma, and avoid increasing the ion mobility to cause the charge gain during the process that affects the stability of the electricity of the nitride read only memory cell. Additionally, the threshold voltage of the nitride read only memory cell can decrease to expand the range of the threshold voltage.