The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6614643 B1

PDF
Full Text
Expired
Date of Patent:
Sep. 02, 2003

Filed:

Nov. 04, 2002
Applicant:
Inventors:

Kiyoaki Morita, Hyogo, JP;

Kenji Yoshiyama, Hyogo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01G 4/228 ;
U.S. Cl.
CPC ...
H01G 4/228 ;
Abstract

In an MIM capacitor element, a leak guard that covers an upper layer electrode layer is provided between upper layer electrode layer and a reflection prevention film and, therefore, a region is not formed wherein upper layer electrode layer and reflection prevention film make a direct contact with each other. As a result, it becomes possible to completely prevent the generation of a leak current between upper layer electrode layer and reflection prevention film. Thus, an improvement in the structure of the MIM capacitor element and an improvement in a manufacturing process for the same can be achieved, thereby it becomes possible to provide a semiconductor device wherein the reliability of the MIM capacitor element can be enhanced.


Find Patent Forward Citations

Morita, Kiyoaki. (2003). Semiconductor device having a capacitor element (U.S. Patent No. 6614643). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6614643

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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