The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2003
Filed:
Jul. 06, 2001
Hai-Hung Wen, Kaohsiung, TW;
Yu-Chih Chuang, Hsinchu Hsien, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method of forming a composite silicon oxide layer over a semiconductor device. The composite silicon oxide layer is formed between the semiconductor device and a doped silicate glass layer. The composite silicon oxide layer comprises two silicon oxide layers, each having a different silicon/oxide composition. The oxygen-rich oxide layer or silicon dioxide layer is formed directly above the semiconductor device, and the silicon-rich oxide layer is formed above the silicon dioxide layer next to the doped silicate glass layer. Both the silicon dioxide layer and the silicon-rich oxide layer are formed in the same plasma deposition chamber.