The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2003
Filed:
Oct. 26, 2000
Yong-woo Heo, Yongin, KR;
Heoung-bin Lim, Sungnam, KR;
Jun-ing Gil, Hwasung-gun, KR;
Eun-mi Bae, Yongin, KR;
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
A nitride film etchant used in the manufacture semiconductor devices, and an etching method using the etchant, are provided. A wafer having a nitride film formed thereon is introduced into a bathing tube containing an etchant which is a water solution containing phosphoric acid (H PO ) of a concentration of 50-70% by weight and hydrofluoric acid (HF), and the nitride film is etched by the etchant. When the concentration of HF is 0.005 to 0.05% by weight, the etch rate of the nitride film is increased, and the selectivity between the nitride film and an oxide film is kept very high. Also, an etchant containing HF of a concentration of 0.05% by weight is provided as a water solution mixed with H PO and HF. Addition of HF of 0.05% by weight or less increases the etch rate of the nitride film, and a high selectivity of the nitride film with respect to an oxide film is maintained.