The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2003
Filed:
Jan. 27, 1999
Applicant:
Inventors:
Takao Yonehara, Atsugi, JP;
Masataka Ito, Chigasaki, JP;
Assignee:
Canon Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1302 ;
U.S. Cl.
CPC ...
H01L 2/1302 ;
Abstract
An SOI substrate having semiconductor base plate and a single crystal semiconductor layer with interposition of an insulating layer is prepared is reclaimed through a first removal step of removing the single crystal semiconductor layer , and a second removal step of removing selectively the insulation layer . Thereby the loss of the thickness of the base plate in the reclamation is decreased in the reproduction of the SOI substrate.
Quick Actions:
Yonehara, Takao. (2003). Process of reclamation of soi substrate and reproduced substrate (U.S. Patent No. 6613676). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6613676
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile