The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 19, 2003
Filed:
Apr. 12, 2001
Jaroslav Hynecek, Allen, TX (US);
ISE TEX, Inc, Allen, TX (US);
Abstract
Image sensors with an enhanced QE and MTF in the NIR spectral region are fabricated on the standard substrates. This is achieved by replacing the p+ type doped layer, typically present under the thick field oxide in the inactive regions of the sensor, with an n+ type doped layer. The n+ type layer, which is biased at the Vdd potential, surrounds the entire image sensor array as a guard ring and is separated from the CCD or CMOS array pixels by a suitable potential barrier. The potential barrier prevents collected charge from escaping into the n+ layer regions. Additional embodiments include output diode and MOS transistor designs that use field plates for creating potential barriers that separate these devices from the n+ type doped field regions.