The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 12, 2003

Filed:

Jan. 17, 2001
Applicant:
Inventors:

Katsumi Mori, Sakata, JP;

Kei Kawahara, Isahaya, JP;

Yoshikazu Kasuya, Sakata, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 3/100 ; H01L 2/900 ; H01L 2/906 ;
U.S. Cl.
CPC ...
H01L 3/100 ; H01L 2/900 ; H01L 2/906 ;
Abstract

A semiconductor device includes a silicon substrate having a trench isolation region . A plurality of dummy convex regions are formed in the trench isolation region . The trench isolation region defines a row direction and a column direction. Also, the trench isolation region define first virtual linear lines L that extend in a direction traversing the row direction and second virtual linear lines L that extend in a direction traversing the column direction. The first virtual linear lines L and the row direction define an angle of 2-40 degree, and the second virtual linear lines L and the column direction define an angle of 2-40 degree. The dummy convex regions are disposed on the first virtual linear lines L and the second virtual linear lines L


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