The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2003
Filed:
Sep. 30, 1997
Applicant:
Inventor:
Chunlin Liang, San Jose, CA (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/976 ; H01L 2/994 ; H01L 3/1062 ; H01L 3/1113 ; H01L 3/1119 ;
U.S. Cl.
CPC ...
H01L 2/976 ; H01L 2/994 ; H01L 3/1062 ; H01L 3/1113 ; H01L 3/1119 ;
Abstract
A field effect transistor including a semiconductor substrate having a first doped region and a second doped region wherein the first doped region and the second doped region are defined by an implantation property. The implantation property of the first doped region has a first implantation characteristic and the implantation property of the second doped region has a second implantation characteristic, and the first implantation characteristic are different from the second implantation characteristic.