The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2003
Filed:
Apr. 05, 2000
Anca Stefanescu, O'Fallon, MO (US);
Zhijian Pei, Worcester, MA (US);
Henry F. Erk, St. Louis, MO (US);
Tom Doane, St. Charles, MO (US);
MEMC Electronic Materials, Inc., St. Peters, MO (US);
Abstract
A process for detecting mechanical and mechanochemical defects in the surface or edge of a silicon wafer resulting from a wafer manufacturing process. The present process comprises treating a surface of the silicon wafer with an aqueous etch solution comprising hydrofluoric acid and an oxidizing agent, followed by optical inspection of the treated wafer surface prior to subjecting that surface to conventional mechanical or mechanochemical polishing. The present process affords the means by which to more efficient identify wafers having such defects, thus reducing wafer manufacturing time and cost.