The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2003
Filed:
Mar. 26, 2002
Applicant:
Inventor:
Masaharu Kirihara, Beacon, NY (US);
Assignee:
Halo LSI, Inc., Wappingers Falls, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 1/90185 ;
U.S. Cl.
CPC ...
H03K 1/90185 ;
Abstract
According to the present invention, a voltage level shifter with smaller size and less latch-up probability is described, in which extra two N-MOS transistors and two P-MOS transistors are added. The extra transistors help node voltages increase or decrease appropriately, and then the size of driving transistors can be small. As a result, the total size of the layout can be smaller. In addition, the voltage increasing or decreasing done by the extra transistors reduce a voltage bouncing which call cause latch-up.
Kirihara, Masaharu. (2003). High voltage level shifter (U.S. Patent No. 6600357). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6600357
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile