The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2003
Filed:
Feb. 26, 2002
Chun Jiang, San Jose, CA (US);
Sunil D. Mehta, San Jose, CA (US);
Lattice Semiconductor Corporation, Hillsboro, OR (US);
Abstract
An improved method for fabricating a tunnel oxide window for use in an EEPROM memory cell is provided so as to produce better programming endurance. P-type lightly-doped drain regions are located at the polysilicon edges of the tunnel window. During the programming operation, the P-type lightly-doped drain regions are in contacting with the polysilicon edges. As a result, there is reduced or suppressed the tunneling current to the program junction region so as to improve the efficiency of programming.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile