The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2003
Filed:
Jun. 23, 2000
Katsuyoshi Washio, Tokorozawa, JP;
Reiko Hayami, Kokubunji, JP;
Hiromi Shimamoto, Tokorozawa, JP;
Masao Kondo, Higashimurayama, JP;
Katsuya Oda, Hachioji, JP;
Eiji Oue, Ome, JP;
Masamichi Tanabe, Tokyo, JP;
Other;
Abstract
A bipolar transistor is provided which is of high reliability and high gain, and which is particularly suitable to high speed operation. The bipolar transistor operates with high accuracy and with no substantial change of collector current even upon change of collector voltage. It also has less variation than conventional bipolar transistors for the collector current while ensuring high speed properties and high gain. In one example, the band gap in the base region is smaller than the band gap in the emitter and collector regions. The band gap is constant near the junction with the emitter region and decreases toward the junction with the collector region. A single crystal silicon/germanium is a typically used for the base region.