The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 29, 2003
Filed:
Jun. 22, 2001
Cha-Won Koh, Ichon-shi, KR;
Cheol-Kyu Bok, Ichon-shi, KR;
Hyundai Electronics Industries, Co., Ltd., Ichon-shi, KR;
Abstract
A method is disclosed for forming fine photoresist patterns on semiconductor devices using a modified, two-step dry develop process using a fluorine-containing gas to produce hydrophobic SiO passivation layers on the sidewalls of the photoresist patterns. These passivation layers increase the structural stability of the fine photoresist patterns and prevent moisture within an air from cohering on the photoresist patterns when the semiconductor substrate is subsequently exposed to the air. Accordingly, the present invention improves the processing margins for very high aspect ratio photoresist patterns resulting in reduced rework and increased yield on very highly integrated semiconductor devices.