The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 22, 2003

Filed:

Sep. 13, 2002
Applicant:
Inventors:

Man-Chun Hu, Taipei Hsien, TW;

Jinn-Ann Kuo, Taipei Hsien, TW;

Wen-Chung Lin, Taipei Hsien, TW;

Assignee:

Acer Laboratories, Inc., Taipei Hsien, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01G 4/228 ;
U.S. Cl.
CPC ...
H01G 4/228 ;
Abstract

An integrated capacitor includes a semiconductor substrate. A first vertical plate is laid over the semiconductor substrate. The first vertical plate consists of a plurality of first conductive slabs connected vertically using multiple first via plugs. A second vertical plate is laid over the semiconductor substrate in parallel with the first vertical plate. The second vertical plate consists of a plurality of second conductive slabs connected vertically using multiple second via plugs. A conductive plate is laid under the first vertical plate and second vertical plate over the semiconductor substrate for shielding the first vertical plate from producing a plate-to-substrate parasitic capacitance thereof. The second vertical plate is electrically connected with the conductive plate using a third via plug.


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