The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 22, 2003

Filed:

Jul. 31, 2001
Applicant:
Inventors:

Tetsuji Yasuda, Ibaraki, JP;

Kazuyuki Ikuta, Ibaraki, JP;

Satoshi Yamasaki, Ibaraki, JP;

Kazunobu Tanaka, Ibaraki, JP;

Doo-sup Hwang, Kyungki-do, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B44C 1/22 ; H01L 2/100 ;
U.S. Cl.
CPC ...
B44C 1/22 ; H01L 2/100 ;
Abstract

A mask for a selective growth of a solid, is provided in which the solid is selectively grown in a predetermined region of a substrate and growth on other regions is suppressed. A method is also provided for selectively growing a solid on only the predetermined region of a substrate using the mask. In the mask, a surface layer and an underlayer are provided, each having different chemical compositions. Thus, even if the mask is formed on a substrate in an ultra thin film, the generation of mask defects can be suppressed and stability provided to heat and electron beams.


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