The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2003
Filed:
Aug. 03, 2000
Applicant:
Inventor:
Hajime Kimura, Hyogo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1302 ;
U.S. Cl.
CPC ...
H01L 2/1302 ;
Abstract
A polycrystalline silicon film and tungsten silicide film are formed on a silicon substrate . An insulating film to be a hard mask is formed on tungsten silicide film . A photoresist pattern is formed on the insulating film. The insulating film is anisotropically etched using photoresist pattern as a mask. By etching the exposed side surface of insulating film in a gas phase hydrofluoric acid ambient, a hard mask is formed. Thus, a mask material with a desired dimension is obtained without causing any variation in thickness of the mask material, and the layer to be the mask material is prevented from coming off the semiconductor substrate.