The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 15, 2003
Filed:
Jul. 30, 2001
Michikazu Matsumoto, Uji, JP;
Naohisa Sengoku, Takatsuki, JP;
Matsushita Electric Industrial Co., Ltd., Osaka, JP;
Abstract
A first metal film of a first metal is deposited on a silicon-containing film containing silicon as a principal constituent, and a second metal film of a nitride of a second metal is deposited on the first metal film. Thereafter, a metal film with a high melting point is deposited on the second metal film, so as to form a multi-layer film of the silicon-containing film, the first metal film, the second metal film and the metal film with a high melting point. The multi-layer film is then subjected to annealing at a temperature of 750° C. or more. In this case, the first metal is nitrided to be changed into a nitride of the first metal and a silicide layer of the first metal is not formed in a surface portion of the silicon-containing film before the annealing.