The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2003
Filed:
Jan. 18, 2001
Akifumi Tada, Oyama, JP;
Tatushi Igarashi, Oyama, JP;
Ushiodenki Kabushiki Kaisha, Tokyo, JP;
Abstract
The invention relates to a semiconductor exposure ArF excimer laser device having a narrow line width containing 95% of the energy of 1.15 pm or less while using an optical system of prior art beam expansion prisms and a diffraction grating. The ArF excimer laser device for narrowing the bandwidth has a line-narrowing optical system formed of an echelle diffraction grating ( ) in a Littrow arrangement, a beam expansion prism system composed of at least three prisms arranged on the incident side of the echelle diffraction grating, and slits . The blaze angle (&thgr;) of the diffraction grating is 82° or less, the magnification rate M of the beam expansion prism system is 26 times or less, the oscillation pulse width T is 60 ns or less, the length L of the resonator is in a range of 1000 to 1350 mm and the slit width W is 1.0 mm or more, satisfying relation (W+11) cos &thgr;/(LMT )<4.94×10 .
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile