The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2003
Filed:
Jan. 09, 2002
Ishai Nachumovsky, Migdal Haemek, IL;
Yaov Nissan-Cohen, Migdal Haemek, IL;
Robert J. Strain, San Jose, CA (US);
Tower Semiconductor Ltd., Migdal Haemek, IL;
Abstract
A multi-bit programmable memory cell is provided that includes an access transistor and a plurality of N anti-fuse elements. The access transistor has a source coupled to a source line and a gate coupled to a word line. Each of the anti-fuse elements has a first terminal coupled to a drain of the access transistor, and a second terminal coupled to a corresponding bit line. At most, only one of the anti-fuse elements is programmed. The memory cell is capable of storing M bits, wherein N=2 −1. A method is provided for both programming and reading the memory cell. In another embodiment, the anti-fuse elements can be replaced with mask-programmable elements.