The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2003
Filed:
Nov. 30, 2001
Applicant:
Inventors:
Assignee:
Samsung Electronics Co., Ltd., Suwon, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01R 3/100 ; G01R 1/02 ; G01R 1/132 ; G01N 2/100 ; A61N 5/00 ;
U.S. Cl.
CPC ...
G01R 3/100 ; G01R 1/02 ; G01R 1/132 ; G01N 2/100 ; A61N 5/00 ;
Abstract
A parameter monitoring apparatus for a high voltage chamber in a semiconductor wafer processing system monitors parameters in the high voltage chamber in real time by converting an electrical signal generated from the high voltage chamber into an optical signal using an electro-optical converter. The optical signal is then converted back into an electrical signal again by an opto-electrical converter. The parameters can be monitored in real time without damaging measurement devices, since they are not influenced by the potential difference between the high voltage chamber and the measurement device.