The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2003
Filed:
Sep. 24, 1999
Takuya Komoda, Sanda, JP;
Tsutomu Ichihara, Hirakata, JP;
Koichi Aizawa, Neyagawa, JP;
Nobuyoshi Koshida, Kodaira, JP;
Matsushita Electric Works, Ltd., Osaka, JP;
Abstract
In a field emission electron source, a strong electric field drift part is formed on the n-type silicon substrate on the principal surface thereof and a surface electrode made of a gold thin film is formed on the strong electric field drift part . And the ohmic electrode is formed on the back surface of the n-type silicon substrate . In this field emission electron source , when the surface electrode is disposed in the vacuum and a DC voltage is applied to the surface electrode which is of a positive polarity with respect to the n-type silicon substrate (ohmic electrode ), electrons injected from the n-type silicon substrate are drifted in the strong electric field drift part and emitted through the surface electrode . The strong electric field drift part comprises a drift region which has a cross section in the structure of mesh at right angles to the direction of thickness of the n-type silicon substrate , which is an electrically conductive substrate, and a heat radiation region which is filled in the voids ox the mesh and has a heat conduction higher than that of the drift region