The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2003
Filed:
Aug. 16, 2001
Applicant:
Inventor:
Michael E. Thomas, Milpitas, CA (US);
Assignee:
National Semiconductor Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/976 ; H01L 2/994 ; H01L 3/1062 ; H01L 3/1113 ; H01L 3/1119 ;
U.S. Cl.
CPC ...
H01L 2/976 ; H01L 2/994 ; H01L 3/1062 ; H01L 3/1113 ; H01L 3/1119 ;
Abstract
A contact opening ( ) is provided in a dielectric layer ( ) overlaying a gate electrode ( ). The contact opening and gate electrode are of substantially the same width, thus allowing for minimized area contact. A pair of process buffering regions ( ) situated along the sidewalls of the gate electrode furnish additional landing area for the contact opening without exposing the sidewalls of the gate electrode.