The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2003
Filed:
Aug. 31, 2001
Applicant:
Inventors:
Paul J. Schuele, Boise, ID (US);
Pierre C. Fazan, Boise, ID (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 2/14763 ; H01L 2/144 ;
U.S. Cl.
CPC ...
H01L 2/14763 ; H01L 2/144 ;
Abstract
This invention is a process for forming an effective titanium nitride barrier layer between the upper surface of a polysilicon plug formed in a thick dielectric layer and a platinum lower capacitor plate in a dynamic random access memory which is being fabricated on a silicon wafer.
Schuele, Paul. (2003). Method of fabricating a contact structure having a composite barrier layer between a platinum layer and a polysilicon plug (U.S. Patent No. 6589867). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6589867
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile