The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2003
Filed:
Oct. 09, 2001
Wan-Yi Liu, Chien-Chen District, TW;
Ping-Yi Chang, Da-Liao Hsiang, TW;
Macronix International Co., Ltd., Hsinchu, TW;
Abstract
A method of forming a shallow trench isolation structure. A pad oxide layer and a mask layer are sequentially formed over a substrate. A portion of the pad oxide layer, mask layer and substrate are removed to form a trench in the substrate. A first stage high-density plasma chemical vapor deposition having a high etching/deposition ratio is conducted to form a layer of insulation material over the substrate. A second stage high-density plasma chemical vapor deposition having a lower etching/deposition rate is conducted to form a second layer of insulation material over the substrate and completely fills the trench. Insulating material outside the trench region is removed. Finally, the mask layer and the pad oxide layer are sequentially removed to form a complete STI structure.