The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2003
Filed:
Dec. 18, 2000
Applicant:
Inventors:
Junya Ishizaki, Annaka, JP;
Nobuhiko Noto, Annaka, JP;
Assignee:
Shin-Etsu Handotai Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 3/10304 ; H01L 3/10296 ; H01L 2/1302 ; H01L 2/126 ; C30B 3/120 ;
U.S. Cl.
CPC ...
H01L 3/10304 ; H01L 3/10296 ; H01L 2/1302 ; H01L 2/126 ; C30B 3/120 ;
Abstract
Provided is a compound semiconductor single crystal and a fabrication process for a compound semiconductor device capable of forming a prescribed pattern without requirement of many steps. A group V element component in a III-V compound semiconductor single crystal or a group VI element component in the II-VI compound semiconductor single crystal is reduced less than a composition ratio expressed by a chemical formula of a corresponding compound semiconductor single crystal in a pattern-shaped portion.
Quick Actions:
Ishizaki, Junya. (2003). Compound semiconductor single crystal and fabrication process for compound semiconductor device (U.S. Patent No. 6589447). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6589447
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile