The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 08, 2003
Filed:
Feb. 08, 2001
Applicant:
Inventors:
Mayank Bulsara, Cambridge, MA (US);
Eugene A. Fitzgerald, Windham, NH (US);
Assignee:
AmberWave Systems Corporation, Salem, NH (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C30B 2/522 ; C30B 3/306 ;
U.S. Cl.
CPC ...
C30B 2/522 ; C30B 3/306 ;
Abstract
A method of processing semiconductor materials and a corresponding semiconductor structure, including providing a virtual substrate of a GaAs epitaxial film on a Si substrate, and epitaxially growing a relaxed graded layer of In Ga As at a temperature ranging upwards from about 600° C. with a subsequent process for planarization of the InGaAs alloy.