The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 01, 2003

Filed:

Jun. 28, 2001
Applicant:
Inventors:

Koichiro Misu, Tokyo, JP;

Kenji Yoshida, Tokyo, JP;

Koji Ibata, Tokyo, JP;

Shusou Wadaka, Tokyo, JP;

Tsutomu Nagatsuka, Tokyo, JP;

Fusaoki Uchikawa, Tokyo, JP;

Akira Yamada, Tokyo, JP;

Chisako Maeda, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 4/1047 ;
U.S. Cl.
CPC ...
H01L 4/1047 ;
Abstract

There is provided a film bulk acoustic wave device comprising: a silicon substrate , a dielectric film including a silicon nitride formed on the substrate and a silicon oxide on the silicon nitride , a bottom electrode formed on the dielectric film , a piezoelectric film formed on the bottom electrode , and a top electrode formed on the piezoelectric film , wherein a via hole is formed in such a manner that the thickness direction of a part of the silicon substrate which is opposite to a region including a part where the top electrode exists is removed from the bottom surface of the silicon substrate to a boundary surface with the silicon nitride


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