The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 24, 2003

Filed:

Jun. 22, 2001
Applicant:
Inventors:

Motohiro Suyama, Hamamatsu, JP;

Akihiro Kageyama, Hamamatsu, JP;

Masaharu Muramatsu, Hamamatsu, JP;

Assignee:

Hamamatsu Photonics K. K., Hamamatsu, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 4/006 ; H01J 4/014 ; H04N 3/14 ; H04N 5/225 ; H04N 5/335 ;
U.S. Cl.
CPC ...
H01J 4/006 ; H01J 4/014 ; H04N 3/14 ; H04N 5/225 ; H04N 5/335 ;
Abstract

An electron tube mainly includes a sleeve , an input plate having a photocathode surface , a stem and a CCD . A vacuum is provided in an interior of the electron tube . The CCD is fixed onto the stem such that a rear surface B faces the photocathode surface . In the CCD , on a single conductive type semiconductor substrate , a buried layer , a barrier region , a SiO layer , a storage electrode layer , a transmission electrode layer , and a barrier electrode layer are formed at their predetermined positions. A PSG film is formed at an entire front surface A over these layers to flatten the surface of the CCD . Further, SiN film mainly composed of SiN is formed above the PSG film over the entire front surface A.


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