The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2003
Filed:
May. 09, 2002
Chi-Feng Huang, Pingtung, TW;
Chun-Hon Chen, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd, Hsin, TW;
Abstract
Within a method for fabricating a microelectronic fabrication, and the microelectronic fabrication fabricated employing the method, there is formed within the microelectronic fabrication a capacitor structure upon a conductor stud layer formed into a first via defined by a patterned dielectric layer to reach a one of a pair of patterned conductor layers within the microelectronic fabrication prior to forming through the patterned dielectric layer a second via to reach the other of the pair of patterned conductor layers within the microelectronic fabrication. The method provides the resulting microelectronic fabrication with enhanced reliability and performance.