The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2003
Filed:
Apr. 10, 2001
Applicant:
Inventors:
Martin Weigert, Hanau, DE;
Uwe Konietzka, Geiselbach, DE;
Assignee:
W.C. Heraeus GmbH & Co., KG, Hanau, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B22D 2/715 ;
U.S. Cl.
CPC ...
B22D 2/715 ;
Abstract
The target material for a sputtering target for depositing silicon layers in their nitride or oxide form by means of reactive cathode atomization, such as e.g. Si N or SiO in the form of optical functional layers or in the form of thermal protective layers on glass substrates, is a cast silicon element, that has been solidified from the melt condition and which forms a parallelepiped, with a dopant, that has been mixed in with the melt, whereby the dopant is 1 wt % to 15 wt % aluminum, and whereby the casting mold preferably has a cavity which forms a parallelepiped.