Non-volatile memory device with tunnel oxide

Abstract

A method and apparatus invention that relates to the reduction of leakage current through a tunnel oxide layer of a memory cell to improve data retention. One method of operating a non-volatile memory cell comprises placing electrons on a floating gate of the memory cell and then placing positive charge on a control gate of the memory cell to improve data retention. The positive charge causes the electrons on the floating gate to migrate away from a tunnel oxide layer of the memory cell. In one embodiment, a Flash memory device comprises a memory array of multiple memory cells. Each memory cell comprises a control gate, a floating gate, an inter-gate dielectric layer positioned between the control gate and the floating gate, a substrate, and a tunnel oxide layer positioned between the floating gate and the substrate. Control circuitry is used to control memory operations and couple a positive charge to the control gate of the memory cell to attract electrons on the floating gate of the memory cell away from the tunnel oxide layer of the memory cell.