The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 17, 2003

Filed:

Jun. 07, 2002
Applicant:
Inventors:

Chien-Hung Liu, Taipei, TW;

Shou-Wei Huang, Chilung, TW;

Shyi-Shuh Pan, Kaohsiung, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 1/300 ; G11C 1/604 ;
U.S. Cl.
CPC ...
G11C 1/300 ; G11C 1/604 ;
Abstract

The presents invention provides an initialization method of a P-type silicon nitride read only memory. A P-type silicon nitride read only memory is provided. An ultra-violet light is uniformly radiated onto the P-type silicon nitride read only memory. Electron traps are thus evenly distributed in a silicon nitride layer of the P-type silicon nitride read only memory. The P-type silicon nitride read only memory is thus uniformly programmed to a low threshold voltage (Low|Vt|) to achieve the device initialization effect.


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