The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2003
Filed:
Jun. 26, 2002
Applicant:
Inventors:
Lung-I Chiue, Tao-Yuan, TW;
Yen-Tai Lin, Hsin-Chu, TW;
Assignee:
eMemory Technology Inc., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 1/90185 ;
U.S. Cl.
CPC ...
H03K 1/90185 ;
Abstract
A level shift circuit for shifting an input voltage to an output voltage is provided. The level shift circuit includes at least a complementary metal oxide semiconductor (CMOS) transistor formed on a p-substrate. The CMOS transistor has a PMOS transistor and an NMOS transistor. The NMOS transistor includes a gate electrode, a drain electrode having an n-well formed on the p-substrate and a first n-doped region formed inside the n-well, and a source electrode having a second N-doped region formed on the p-substrate.