The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2003
Filed:
May. 24, 2001
Walterus Theodorus Franciscus Maria De Laat, Eindhoven, NL;
Johannes Van Wingerden, Eindhoven, NL;
Petrus Maria Meijer, Eindhoven, NL;
Koninklijke Philips Electronics N.V., Eindhoven, NL;
Abstract
The invention relates to a method of manufacturing a semiconductor device, comprising the provision of a substrate ( ) having a dielectric layer ( ) on this substrate ( ), a conductive layer ( ) on the dielectric layer ( ), an inorganic anti-reflection coating ( ) on the conductive layer ( ), and a resist mask ( ) on the inorganic anti-reflection coating ( ). The method further comprises the following steps: patterning the inorganic anti-reflection coating ( ) by means of the resist mask ( ), patterning the conductive layer ( ) by etching down to the dielectric layer ( ), removing the resist mask ( ), and removing the inorganic anti-reflection coating ( ). According to the invention, the inorganic anti-reflection coating ( ) is removed by means of a dry etch, using a polymerizing gas. It is achieved by this that no or hardly any changes in the critical dimension will occur.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile