Method for forming aluminum oxide as a gate dielectric

Abstract

A method for forming a gate structure begins by preparing a semiconductor substrate provided with an isolation region formed therein. A thin SiO layer is thermally grown on top of the semiconductor device by using a wet H /O or a dry O . And then, an aluminum oxide layer is formed on top of the semiconductor substrate with doping a dopant in situ. A conductive layer is formed on top of the Al O layer. Finally, the conductive layer and the Al O layer are patterned into the gate structure. The dopant is a material selected from a group consisting of Si, Zr, Hf, Nb or the like.