The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 2003
Filed:
Feb. 23, 2001
Tobias Mono, Poughkeepsie, NY (US);
Paul Schroeder, Langebrueck, DE;
Infineon Technologies AG, Munich, DE;
Abstract
Method and apparatus for determining photoresist pattern linearity. The method and apparatus comprises a substrate and a measuring pattern ( ) printed on the substrate comprising a series of parallel lines ( ) having a line width ( ) and having a pre-determined pitch. By magnifying the semiconductor wafer on which the pattern feature ( ) is printed and analyzing the magnified wafer from a top down view, the linearity of the pattern feature ( ) can be determined from the amount of shift in the edges of the pattern feature ( ). By utilizing the method and apparatus for other pattern features, the linearity of the entire pattern can be determined.