The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6579425 B1

PDF
Full Text
Expired
Date of Patent:
Jun. 17, 2003

Filed:

Jul. 16, 2001
Applicant:
Inventors:

Apostolos Voutsas, Vancouver, WA (US);

Yukihiko Nakata, Nara, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 1/435 ;
U.S. Cl.
CPC ...
C23C 1/435 ;
Abstract

A system and method are provided to sequentially deposit a silicon dioxide base coat barrier layer adjacent a thin silicon film, to minimize the formation of water and —OH radicals. Both the base coat and thin silicon films are sputter to eliminate hydrogen chemistries. Further, the sputter processes are conducted sequentially, without breaking the vacuum seat to minimize the absorption of water in the base coat layer that conventionally occurs between deposition steps. This process eliminates the total number of process steps required, as there is no longer a need for furnace annealing the base coat before the deposition of the thin silicon film, and no longer a need for a dehydrogenation annealing step after the deposition of the thin silicon film.


Find Patent Forward Citations

Voutsas, Apostolos. (2003). System and method for forming base coat and thin film layers by sequential sputter depositing (U.S. Patent No. 6579425). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6579425

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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