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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 6579153 B1

PDFFull Text
Date of Patent:
Jun. 17, 2003

Filed:

Jan. 09, 2001

Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing process

Applicant:
Inventors:

Kazuhito Uchikura, Tokyo, JP;

Masayuki Motonari, Tokyo, JP;

Masayuki Hattori, Tokyo, JP;

Nobuo Kawahashi, Tokyo, JP;

Assignee:

Other;

Attorney:

Oblon, Spivak, McClelland, Maier & Neustadt, P.C.

Primary Examiner:

Joseph J Hail, III

Assistant Examiner:

David B Thomas

Int. Cl.
CPC ...
H01L 2/1283 ;
U.S. Cl.
CPC ...
H01L 2/1283 ;
Abstract

There are provided aqueous dispersions for CMP that can efficiently polish both copper films and barrier metal films, which can give sufficient flattened finished surfaces without excessive polishing of insulating films, as well as a CMP process employing the aqueous dispersions. The aqueous dispersions for CMP according to the invention are characterized in that for polishing of a copper film, barrier metal film and insulating film under the same conditions, the polishing rate ratio (R /R ) of the copper film (R ) and the barrier metal film (R ) is such that 0.5&lE;R /R &lE;2, and the polishing rate ratio (R /R ) of the copper film (R ) and the insulating film (R ) is such that 0.5&lE;R /R &lE;2. Other aqueous dispersions for CMP according to the invention are characterized in that they contain an abrasive, a heterocyclic compound, an organic acid and an oxidizing agent, and for polishing of a copper film, barrier metal film and insulating film under the same conditions, the polishing rate ratio (R /R ) of the copper film (R ) and the barrier metal film (R ) is such that 0<R /R &lE;5, and the polishing rate ratio (R /R ) of the insulating film (R ) and the barrier metal film (R ) is such that 0<R /R &lE;2. The CMP process of the invention is characterized by using these aqueous dispersions for CMP in the second stage of two-stage polishing, in the second stage of three-stage polishing or in the third stage of three-stage polishing.

Find Patent Forward Citations

Uchikura, Kazuhito. (2003). Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing process (U.S. Patent No. 6579153). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6579153

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