The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2003
Filed:
Jun. 30, 2000
Applicant:
Inventors:
David Cooperberg, Mt. Kisco, NY (US);
Vahid Vahedi, Albany, CA (US);
Assignee:
Lam Research Corporation, Fremont, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G05B 1/302 ; H01L 2/100 ;
U.S. Cl.
CPC ...
G05B 1/302 ; H01L 2/100 ;
Abstract
A method and an apparatus for a semi-empirical process simulation using a calibrated profile simulator to create a reactor model which can predict neutral and ion flux distributions on a substrate as a function of the reactor settings include providing a set of conditions characterized by unique reactor settings. Wafers are processed under each condition. Etch or deposition rates and surface profiles are measured and used in the calibrated profile simulator to derive the flux distributions. The flux distributions data generated by the processes are then used to create a reactor model.