The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2003
Filed:
Jun. 26, 2002
Applicant:
Inventors:
Akira Okutoh, Kobe, JP;
Kazuya Ishihara, Souraku-gun, JP;
Assignee:
Sharp Kabushiki Kaisha, Osaka, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/976 ;
U.S. Cl.
CPC ...
H01L 2/976 ;
Abstract
By depositing a diffusion prevention film constructed of an oxide of aluminum containing barium and heat-treating the diffusion prevention film in the atmosphere of a mixed gas of oxygen and carbon dioxide, carbon dioxide is made to adsorb to the barium contained in the diffusion prevention film . The diffusion prevention film can effectively restrain the permeation of hydrogen and has an excellent hydrogen barrier property. By using the diffusion prevention film for a capacitor, a high-yield semiconductor storage device having the capacitor of a stable ferroelectric characteristic or high dielectric characteristic can be obtained.