The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2003
Filed:
Apr. 07, 1998
Applicant:
Inventors:
Samir Chaudhry, Orlando, FL (US);
Sundar S. Chetlur, Orlando, FL (US);
Hem M. Vaidya, Orlando, FL (US);
Assignee:
Agere Systems Inc., Allentown, PA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1336 ;
U.S. Cl.
CPC ...
H01L 2/1336 ;
Abstract
A NMOSFET semiconductor device is formed having an LDD structure by simultaneous co-implantation of arsenic and phosphorous to form an N− layer. The co-implantation is performed subsequent to the formation of the gate structure and a thin (100 Å-300 Å) gate spacer but prior to the implantation of a highly doped N+ source/drain.
Chaudhry, Samir. (2003). Method of forming semiconductor device with ldd structure (U.S. Patent No. 6576521). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6576521
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile